…Publication Knudsen, J., Gallo, T., Boix, V. et al. Stroboscopic operando spectroscopy of the dynamics in heterogeneous catalysis by event-averaging open_in_new Nature Communications, 12, Article number: 6117 (2021) 10.1038/s41467-021-26372-y open_in_new…
…the SXL will open up possibilities in a number of fields including the study of ultrafast magnetism with far-reaching implication for the understanding of fundamental processes such as ultrafast demagnetization….
…following project objectives focusing on Life Science, research facilities and regional development in a cross-regional perspective: Increased number of Life Science researchers in cross border-regional projects in ÖKS-Hamburg, in close…
…year for access to the FragMAX facility through regular calls for proposals at MAX IV Laboratory. Moreover, we can offer fast access to a limited number of proposals each year…
…focus on inverse microscopy techniques, such as Coherent Diffraction Imaging -CDI, Ptychography, Holography. The Webinar series has space for a limited number of contributed talks on: application and/or development of…
The photon source is a linearly-polarizing undulator with the following characteristics: Total length 2652 mm Period length 54.4 mm Number of full periods 48 Minimum gap 16 mm Maximum deflection…
…days) or a full week (5-6 days). Since the number of shifts available won’t be known until the scheduling is complete, we advise all users to apply for 15 shifts…
…Files These files describe the setup of the MAX IV accelerators. Technical Notes This is a list of internally published notes sorted by note number (date). Clicking on an entry…
Summary Submitted proposals 370 Accepted proposals 224 Average score 3.67 Average cutoff score 3.32 Oversubscription Oversubscription rates based on number of proposals, per beamline, for the Fall23 call. Oversubscription per…
…viable photoelectrode with adjustable Schottky junction. The photoelectrode was developed by growing a tailored number of uniform graphene layers on cubic silicon carbide (3C-SiC) semiconductor, the latter of which captures…