Oxygen cycling reveals path to next-gen ferroelectric devices

Research is heating up to achieve greater fundamental understanding of the mechanism of ferroelectricity in hafnia-based materials, a crucial step in the development of next generation devices. New findings from the University of Groningen (RUG) in the journal Science define the key role of oxygen for greater miniaturization potential and structural stability beyond that of standard ferroelectric materials used in low-power memories. Electron microscopy and MAX IV’s NanoMAX beamline have illuminated the nature of polarization in thin films of hafnium zirconium oxide for ferroelectronics.